Theoretical Verification of Formula for Charge Function in Time q = c * v in RC Circuit for Charging/Discharging of Fractional & Ideal Capacitor | Chapter 01 | Theory and Applications of Physical Science Vol. 1
Here in this Chapter the verification
of newly developed formula of charge storage in capacitor as q = c*v, in RC circuit, is carried out in
order to get validation for ideal loss
less capacitor as well as fractional order capacitors for charging and discharging
cases. This new formula is generalization of charge storage mechanism in
capacitors dielectric relaxations (with and without memory effect), which is
different to usual and conventional way of writing capacitance multiplied by
voltage to get charge stored in a capacitor
i.e. q = cv. We use this new formulation i.e. q = c*v in the RC circuits
to verify the results that are obtained via classical circuit theory, for a
case of classical ideal loss less capacitor as well as for case for fractional
capacitor. The use of this formulation is suited for super-capacitors, Constant
Phase Elements (CPE), and for dielectric relaxations that show memory effect as
they show fractional order in their behavior. This new formula is used to get
the ‘memory effect’ that is observed in self-discharging phenomena of
super-capacitors-that memorizes its history of charging profile. Special
emphasis is given to detailed derivational steps in order to get clarity in
usage of this new formula in the RC circuit examples. This Chapter validates
the new formula of charge storage q =
c*v, in capacitor, for circuital usage.
Author(s) Details
Shantanu Das
Scientist Reactor Control
Division, E&I Group BARC, Mumbai-400085, India and Department of Physics,
Jadavpur University, Kolkata-700032, India.
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