Intensity Noise Properties of Blue-violet Nitride Semiconductor Laser | Chapter 07 | Emerging Issues in Science and Technology Vol. 3
In this chapter, we present a research study on the noise properties of
the blue-violet InGaN laser diode. The noise is described in terms of the
spectral properties of the relative intensity noise (RIN). We examine the
validity of the present noise modeling by comparing the simulated results with
experimental measurements available in literature. We also compare the obtained
noise results with those of AlGaAs lasers, which clarifies dependence of RIN on
the emission wavelength. Also, we examine the influence of gain suppression on
the quantum RIN. In additions, we examine the changes in the RIN level when
describing the gain suppression by the case of inhomogeneous spectral
broadening. The results show that RIN of the 410nm-InGaN laser is nearly 9 dB
higher than that of the AlGaAs laser.
Author(s) Details
Moustafa Ahmed
Department of Physics,
Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589, Saudi Arabia
and Department of Physics, Faculty of Science, Minia University, 61519
El-Minia, Egypt.
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